Electronic
Devices and
Materials
-Exploring
Future
Photovoltaic Devices-
Welcome to visit my group home page! It is a
rewarding career
in my research group. My current research focuses on studies of
low-cost and high efficiency photovoltaic devices utilizing novel
nanoscale materials. One of the examples is the emerging perovskite
materials. Our group has long experience in fabrication and
characterization of semiconductor devices and sensors using novel
nanoscale materials. The graduates in my
research
area are highly demanded in industry (See Group Member Page). I always
need
outstanding people! Please feel free to send me
your
resume.
Dr. Chen's Research
Accomplishment
Google Scholar
Citation:
http://scholar.google.com/citations?user=lW-EfMYAAAAJ&hl=en&oi=ao
TiO2
Nanotubes and Carbon Nanotubes.
Dr.
Chen
had extensive experience in anodization of
aluminum when he
worked on humidity sensors in 1989-1992. In 2001, working with Dr. Dawei Gong, his postdoctoral
research
associate, and Prof. Craig A. Grimes who was then at Kentucky, he
successfully created TiO2
nanotubes through anodization of pure titanium,
a new type of inorganic oxide nanotubes. This idea came from his past
experience in humidity sensor research using anodization. As the corresponding author, Prof. Chen
first presented this work at
Symposium Z3.9, 2001
MRS Fall Meeting, Nov. 26-29, 2001, Boston,
MA, USA.
The first author, Dr. Dawei Gong, moved with Prof.
Craig A. Grimes to Penn State
University, where the work was submitted to J. Mater. Res. with a wrong
address
of Prof. Chen, Wenchong Hu, and Suresh Singh. The paper entitled “Titanium
Oxide Nanotube Arrays Prepared By Anodic
Oxidation” was
published in J. Mater. Research 16, 3331-3334,
2001, Citation: >2,000 on
Google Scholar. In addition, he and
his co-workers fabricated the first vertically aligned carbon nanotube
(CNT)
arrays with high density and uniformity on silicon
substrates using porous anodic aluminum oxide (AAO) as templates (“Growth
of well-aligned carbon nanotube arrays on
silicon substrate using porous alumina film as nanotemplate”,
Appl.
Phys. Lett. vol.
79, 3083-3085, 2001, Citation: >150 on Google Scholar; “Ethylene
flame Synthesis of well-aligned multi-walled carbon nanotubes”, Chem.
Phys. Lett.
vol. 346, pp. 23-28, 2001, Citation:
>160 on Google Scholar ). This provides a
possibility for integration of carbon
nanotube arrays with silicon electronics. The above research has a
large impact
on nanoscale material research community.
Drift-free
moisture sensor. Working with his colleagues at
University of Electronic Science &
Technology, Chengdu, China, Dr.
Chen developed
the world’s first reliable and drift-free humidity/moisture sensor for
trace moisture measurement (<1 ppmv) using anodization (J. Am.
Ceram. Soc., vol. 74, pp. 1325-1330, 1991, and Proc. 27th annual
conference, IEEE Industry Application Soc., Houston, TX, Oct.
1992, vol. 2, pp1668-1675). He won two awards for this contribution:
The Second Prize Paper Award, Industrial Automation and Control
Committee, the 27th Annual Conference, IEEE Industry Application
Society, USA, 1992 and The National Award for Invention: The Third
Prize Award, Ministry of Science & Technology, China, 1995. His
recent technical review about this drift-free moisture sensor and other
humidity sensors has made a large impact on humidity sensor research
(“Humidity
sensors: a review of materials and mechanisms”, Sensor
Letters vol. 3, 274-295, 2005，Citation:
>650 on Google Scholar). After further research and
development (with two US patents and one Chinese patent filed), this
novel sensor is being commercialized in Advanced
Semiconductor Processing Technology LLC (ASPT USA),
Lexington, Kentucky, USA, and Advanced Semiconductor Processing
Technology Chengdu Ltd. (ASPT Chengdu), Chengdu, Sichuan, China.
Hydgogen/Deuterium
(H/D)
Isotope Effect.
This effect was discovered
in 1996 by Drs. Lyding and Hess at
University of
Illinois at Urbana-Champaign (UIUC). As a graduate student at UIUC, Dr.
Chen helped develop this effect into
a
manufacturing process, so that integrated
circuits (microchips) lifetime is dramatically improved (IEEE Electron.
Dev.
Lett., vol. 19, pp. 444-446, 1998；IEEE
Electron. Dev. Lett., vol. 21, no. 5, 221-223, 2000). In addition, the
classical theory suggested that the hot-electron
degradation of MOS transistors was caused by hot electron injection
into the
gate insulator (SiO2). Based on his experiments
using H/D isotope effect, Dr. Chen
proved that it is not the hot-electron injection into the oxide but the
hot-electron
bombarding the SiO2/Si interface that causes the
degradation, (“On the mechanism for interface
trap generation in MOS transistors due to channel hot carrier stressing”,
IEEE
Electron. Dev. Lett., vol. 21, no. 1, 24-26, 2000). This laid a
foundation for
establishing a more accurate theoretical lifetime model for microchips,
which
is very important for the reliability of computers, cell phones, and
iPods/iPads etc.
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